NXP Semiconductors PSMN2R0-60ES,127

NEXPERIA PSMN2R0-60ES - 120A, 60

Manufacturer: NXP Semiconductors
Manufacturer's number: NXP Semiconductors PSMN2R0-60ES,127
Package: Bulk
Datasheet: PDF
Stock: 7
SKU: PSMN2R0-60ES,127
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Details

Parameters
Mfr	NXP Semiconductors
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.2mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	137 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	9997 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	338W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	I2PAK
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Base Product Number	PSMN2R0
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-PSMN2R0-60ES,127-954
Standard Package	1

N-Channel 60 V 120A (Tc) 338W (Tc) Through Hole I2PAK