| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
4 A |
| Voltage - Collector Emitter Breakdown (Max) |
425 V |
| Vce Saturation (Max) @ Ib, Ic |
1V @ 600mA, 3A |
| Current - Collector Cutoff (Max) |
100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
11 @ 2A, 5V |
| Power - Max |
80 W |
| Frequency - Transition |
- |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-220-3 |
| Supplier Device Package |
TO-220AB |
| ECCN |
EAR99 |
| HTSUS |
8541.29.0095 |
| Standard Package |
875 |
Bipolar (BJT) Transistor NPN 425 V 4 A 80 W Through Hole TO-220AB