| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
TrenchMOS™ |
| Package |
Tube |
| Product Status |
Active |
| FET Type |
N-Channel |
| Technology |
MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) |
100 V |
| Current - Continuous Drain (Id) @ 25°C |
63A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) |
10V |
| Rds On (Max) @ Id, Vgs |
20mOhm @ 25A, 10V |
| Vgs(th) (Max) @ Id |
4V @ 1mA |
| Vgs (Max) |
±20V |
| Input Capacitance (Ciss) (Max) @ Vds |
4373 pF @ 25 V |
| FET Feature |
- |
| Power Dissipation (Max) |
200W (Tc) |
| Operating Temperature |
-55°C ~ 175°C (TJ) |
| Mounting Type |
Through Hole |
| Supplier Device Package |
TO-220AB |
| Package / Case |
TO-220-3 |
| RoHS Status |
ROHS3 Compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Unaffected |
| ECCN |
EAR99 |
| HTSUS |
0000.00.0000 |
| Standard Package |
296 |
N-Channel 100 V 63A (Tc) 200W (Tc) Through Hole TO-220AB