NXP USA Inc. BUK7Y10-30B,115

MOSFET N-CH 30V 67A LFPAK56

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. BUK7Y10-30B,115
Package: Bulk
Datasheet: PDF
Stock: 3581
SKU: BUK7Y10-30B,115
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Details

Parameters
Mfr	NXP USA Inc.
Series	Automotive, AEC-Q101, TrenchMOS™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	67A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	10mOhm @ 25A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	18.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1183 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	85W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	LFPAK56, Power-SO8
Package / Case	SC-100, SOT-669
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 30 V 67A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8