NXP USA Inc. PHE13009/DG,127
NOW WEEN - PHE13009 - POWER BIPO
- Manufacturer: NXP USA Inc.
- Manufacturer's number: NXP USA Inc. PHE13009/DG,127
- Package: Bulk
- Datasheet: PDF
- Stock: 4
- SKU: PHE13009/DG,127
- Pricing:we created an exceptionally flexible and competitive pricing policy.
| Parameters | |
|---|---|
| Mfr | NXP USA Inc. |
| Series | - |
| Package | Bulk |
| Product Status | Active |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 12 A |
| Voltage - Collector Emitter Breakdown (Max) | 400 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 1.6A, 8A |
| Current - Collector Cutoff (Max) | 100µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 8 @ 5A, 5V |
| Power - Max | 80 W |
| Frequency - Transition | - |
| Operating Temperature | 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Supplier Device Package | TO-220AB |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Standard Package | 902 |
Bipolar (BJT) Transistor NPN 400 V 12 A 80 W Through Hole TO-220AB
