NXP USA Inc. PMCM650VNEZ

PMCM650VNEZ

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PMCM650VNEZ
Package: Bulk
Datasheet: PDF
Stock: 461
SKU: PMCM650VNEZ
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Details

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	12 V
Current - Continuous Drain (Id) @ 25°C	6.4A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V
Rds On (Max) @ Id, Vgs	25mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id	900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs	15.4 nC @ 4.5 V
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	1060 pF @ 6 V
FET Feature	-
Power Dissipation (Max)	556mW (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	6-WLCSP (1.48x0.98)
Package / Case	6-XFBGA, WLCSP
RoHS Status	Not applicable
ECCN	EAR99
HTSUS	8541.21.0095
Standard Package	4,500

N-Channel 12 V 6.4A (Ta) 556mW (Ta), 12.5W (Tc) Surface Mount 6-WLCSP (1.48x0.98)