Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Tj) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
115mOhm @ 2A, 4.5V |
Vgs(th) (Max) @ Id |
1.15V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
7.2 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
560 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
375mW (Ta), 2.4W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-TSSOP |
Package / Case |
6-TSSOP, SC-88, SOT-363 |
Base Product Number |
PMG85 |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Standard Package |
1 |
P-Channel 20 V 2A (Tj) 375mW (Ta), 2.4W (Tc) Surface Mount 6-TSSOP