NXP USA Inc. PML260SN,118

MOSFET N-CH 200V 8.8A DFN3333-8

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PML260SN,118
Package: Bulk
Datasheet: PDF
Stock: 1862
SKU: PML260SN,118
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Details

Parameters
Mfr	NXP USA Inc.
Series	TrenchMOS™
Package	Bulk
Product Status	Obsolete
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	200 V
Current - Continuous Drain (Id) @ 25°C	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	294mOhm @ 2.6A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	13.3 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	657 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	50W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN3333-8
Package / Case	8-VDFN Exposed Pad
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	636

N-Channel 200 V 8.8A (Tc) 50W (Tc) Surface Mount DFN3333-8