NXP USA Inc. PMPB20EN,115

MOSFET N-CH 30V 7.2A DFN2020MD-6

Manufacturer: NXP USA Inc.
Manufacturer's number: NXP USA Inc. PMPB20EN,115
Package: Bulk
Datasheet: PDF
Stock: 6302
SKU: PMPB20EN,115
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Details

Parameters
Mfr	NXP USA Inc.
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	19.5mOhm @ 7A, 10V
Vgs(th) (Max) @ Id	2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	435 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	1.7W (Ta), 12.5W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1010B-6
Package / Case	6-XFDFN Exposed Pad
ECCN	EAR99
HTSUS	8541.29.0095
Standard Package	1

N-Channel 30 V 7.2A (Ta) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN1010B-6