NXP USA Inc. PMPB40SNA115 - NXP USA Inc. FETs, MOSFETs - BOM, Chip Distributor, Quick Quotation 365day Warranty
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NXP USA Inc. PMPB40SNA115

POWER FIELD-EFFECT TRANSISTOR

  • Manufacturer: NXP USA Inc.
  • Manufacturer's number: NXP USA Inc. PMPB40SNA115
  • Package: Bulk
  • Datasheet: PDF
  • Stock: 1
  • SKU: PMPB40SNA115
  • Pricing:we created an exceptionally flexible and competitive pricing policy.

Quantity:

Unit Price: $0.32

Ext Price: $0.32

Details

Tags

Parameters
Mfr NXP USA Inc.
Series -
Package Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 12.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 43mOhm @ 4.8A, 10V
Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 612 pF @ 30 V
FET Feature -
Power Dissipation (Max) 1.7W (Ta), 12.5W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package DFN2020MD-6
Package / Case 6-UDFN Exposed Pad
RoHS Status Not applicable
Moisture Sensitivity Level (MSL) 1 (Unlimited)
REACH Status Vendor Undefined
ECCN EAR99
HTSUS 8541.29.0095
Standard Package 1,000
N-Channel 60 V 12.9A (Tc) 1.7W (Ta), 12.5W (Tc) Surface Mount DFN2020MD-6