| Parameters |
| Mfr |
NXP USA Inc. |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
1 NPN, 1 PNP - Pre-Biased (Dual) |
| Current - Collector (Ic) (Max) |
100mA |
| Voltage - Collector Emitter Breakdown (Max) |
50V |
| Resistor - Base (R1) |
47kOhms |
| Resistor - Emitter Base (R2) |
47kOhms |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
80 @ 5mA, 5V |
| Vce Saturation (Max) @ Ib, Ic |
150mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) |
100nA (ICBO) |
| Frequency - Transition |
230MHz, 180MHz |
| Power - Max |
350mW |
| Mounting Type |
Surface Mount |
| Package / Case |
6-XFDFN Exposed Pad |
| Supplier Device Package |
DFN1010B-6 |
| Base Product Number |
PQMD12 |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 230MHz, 180MHz 350mW Surface Mount DFN1010B-6