Parameters |
Mfr |
NXP USA Inc. |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
100 V |
Current - Continuous Drain (Id) @ 25°C |
69A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
5V, 10V |
Rds On (Max) @ Id, Vgs |
14.7mOhm @ 20A, 10V |
Vgs(th) (Max) @ Id |
2.1V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
86.3 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
6139 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
195W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
LFPAK56, Power-SO8 |
Package / Case |
SC-100, SOT-669 |
HTSUS |
0000.00.0000 |
Standard Package |
1 |
N-Channel 100 V 69A (Tc) 195W (Tc) Surface Mount LFPAK56, Power-SO8