| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
PNP |
| Current - Collector (Ic) (Max) |
2 A |
| Voltage - Collector Emitter Breakdown (Max) |
100 V |
| Vce Saturation (Max) @ Ib, Ic |
240mV @ 100mA, 1A |
| Current - Collector Cutoff (Max) |
1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
200 @ 100mA, 5V |
| Power - Max |
800 mW |
| Frequency - Transition |
300MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
| Supplier Device Package |
TP |
| Moisture Sensitivity Level (MSL) |
Vendor Undefined |
| REACH Status |
REACH Unaffected |
| Other Names |
2156-2SA2205-E-488 |
| Standard Package |
1 |
Bipolar (BJT) Transistor PNP 100 V 2 A 300MHz 800 mW Through Hole TP