| Parameters |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Current - Collector (Ic) (Max) |
100 mA |
| Voltage - Collector Emitter Breakdown (Max) |
65 V |
| Vce Saturation (Max) @ Ib, Ic |
600mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) |
15nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
110 @ 2mA, 5V |
| Power - Max |
500 mW |
| Frequency - Transition |
300MHz |
| Operating Temperature |
150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package |
TO-92-3 |
| Base Product Number |
BC546 |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
1 |
Bipolar (BJT) Transistor NPN 65 V 100 mA 300MHz 500 mW Through Hole TO-92-3