Parameters |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
50 |
Mfr |
onsemi |
Series |
- |
Package |
Tube |
Product Status |
Obsolete |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
10 A |
Voltage - Collector Emitter Breakdown (Max) |
90 V |
Vce Saturation (Max) @ Ib, Ic |
1.5V @ 1.2A, 12A |
Current - Collector Cutoff (Max) |
- |
DC Current Gain (hFE) (Min) @ Ic, Vce |
- |
Power - Max |
85 W |
Frequency - Transition |
- |
Operating Temperature |
175°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220AB |
RoHS Status |
RoHS non-compliant |
Bipolar (BJT) Transistor NPN 90 V 10 A 85 W Through Hole TO-220AB