onsemi FCPF1300N80ZYD

POWER FIELD-EFFECT TRANSISTOR, N

Manufacturer: onsemi
Manufacturer's number: onsemi FCPF1300N80ZYD
Package: Bulk
Datasheet: PDF
Stock: 497
SKU: FCPF1300N80ZYD
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Details

Parameters
Mfr	onsemi
Series	SuperFET® II
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.3Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 400µA
Gate Charge (Qg) (Max) @ Vgs	21 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	24W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3 (Y-Forming)
Package / Case	TO-220-3 Full Pack, Formed Leads
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-FCPF1300N80ZYD-488
Standard Package	1

N-Channel 800 V 4A (Tc) 24W (Tc) Through Hole TO-220F-3 (Y-Forming)