onsemi FDD1600N10ALZD

POWER FIELD-EFFECT TRANSISTOR, 6

Manufacturer: onsemi
Manufacturer's number: onsemi FDD1600N10ALZD
Package: Bulk
Datasheet: PDF
Stock: 1728
SKU: FDD1600N10ALZD
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Details

Parameters
Mfr	onsemi
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Rds On (Max) @ Id, Vgs	160mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id	2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	3.61 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	225 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	14.9W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252 (DPAK)
Package / Case	TO-252-5, DPak (4 Leads + Tab), TO-252AD
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-FDD1600N10ALZD-488
Standard Package	1

N-Channel 100 V 6.8A (Tc) 14.9W (Tc) Surface Mount TO-252 (DPAK)