onsemi FDD4N60NZ

POWER FIELD-EFFECT TRANSISTOR, 3

Manufacturer: onsemi
Manufacturer's number: onsemi FDD4N60NZ
Package: Bulk
Datasheet: PDF
Stock: 3271
SKU: FDD4N60NZ
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Details

Parameters
Mfr	onsemi
Series	UniFET-II™
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	3.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1.7A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	10.8 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	510 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	114W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
Other Names	2156-FDD4N60NZ-488
Standard Package	1

N-Channel 600 V 3.4A (Tc) 114W (Tc) Surface Mount TO-252AA