onsemi FDD5680

POWER FIELD-EFFECT TRANSISTOR, 3

Manufacturer: onsemi
Manufacturer's number: onsemi FDD5680
Package: Bulk
Datasheet: PDF
Stock: 6860
SKU: FDD5680
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Details

Parameters
Mfr	onsemi
Series	PowerTrench®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	8.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	6V, 10V
Rds On (Max) @ Id, Vgs	21mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1835 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2.8W (Ta), 60W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252AA
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-FDD5680-488
Standard Package	1

N-Channel 60 V 8.5A (Ta) 2.8W (Ta), 60W (Tc) Surface Mount TO-252AA