Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Vce Saturation (Max) @ Ib, Ic |
300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max) |
100nA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 10mA, 5V |
Power - Max |
300 mW |
Frequency - Transition |
250MHz |
Operating Temperature |
150°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
Supplier Device Package |
TO-92-3 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-FJN3301RTA-488 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 50 V 100 mA 250MHz 300 mW Through Hole TO-92-3