Parameters |
Mfr |
onsemi |
Series |
ESBC™ |
Package |
Bulk |
Product Status |
Active |
Transistor Type |
NPN |
Current - Collector (Ic) (Max) |
2 A |
Voltage - Collector Emitter Breakdown (Max) |
800 V |
Vce Saturation (Max) @ Ib, Ic |
750mV @ 330mA, 1A |
Current - Collector Cutoff (Max) |
100µA |
DC Current Gain (hFE) (Min) @ Ic, Vce |
20 @ 400mA, 3V |
Power - Max |
100 W |
Frequency - Transition |
5MHz |
Operating Temperature |
-55°C ~ 125°C (TJ) |
Mounting Type |
Through Hole |
Package / Case |
TO-220-3 |
Supplier Device Package |
TO-220-3 |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Unaffected |
Other Names |
2156-FJP2160DTU-488 |
Standard Package |
1 |
Bipolar (BJT) Transistor NPN 800 V 2 A 5MHz 100 W Through Hole TO-220-3