onsemi FQPF11N40C

POWER FIELD-EFFECT TRANSISTOR, 1

Manufacturer: onsemi
Manufacturer's number: onsemi FQPF11N40C
Package: Bulk
Datasheet: PDF
Stock: 8420
SKU: FQPF11N40C
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Details

Parameters
Mfr	onsemi
Series	QFET®
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	400 V
Current - Continuous Drain (Id) @ 25°C	10.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	530mOhm @ 5.25A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	35 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1090 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	44W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F-3
Package / Case	TO-220-3 Full Pack
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	2156-FQPF11N40C-488
Standard Package	1

N-Channel 400 V 10.5A (Tc) 44W (Tc) Through Hole TO-220F-3