| Parameters |
| Current - Collector (Ic) (Max) |
50mA |
| Operating Temperature |
-55°C ~ 150°C (TJ) |
| Mounting Type |
Through Hole |
| Package / Case |
TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package |
TO-92 (TO-226) |
| RoHS Status |
RoHS non-compliant |
| Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
| REACH Status |
REACH Affected |
| ECCN |
EAR99 |
| HTSUS |
8541.21.0075 |
| Standard Package |
4,000 |
| Mfr |
onsemi |
| Series |
- |
| Package |
Bulk |
| Product Status |
Active |
| Transistor Type |
NPN |
| Voltage - Collector Emitter Breakdown (Max) |
12V |
| Frequency - Transition |
2GHz |
| Noise Figure (dB Typ @ f) |
5dB @ 200MHz |
| Gain |
15dB |
| Power - Max |
350mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce |
25 @ 3mA, 1V |
RF Transistor NPN 12V 50mA 2GHz 350mW Through Hole TO-92 (TO-226)