Parameters |
Mfr |
onsemi |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
6.6A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
745mOhm @ 3.25A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
15 nC @ 10 V |
Vgs (Max) |
±25V |
Input Capacitance (Ciss) (Max) @ Vds |
440 pF @ 50 V |
FET Feature |
- |
Power Dissipation (Max) |
84W (Tc) |
Operating Temperature |
-55°C ~ 150°C (TJ) |
Mounting Type |
Through Hole |
Supplier Device Package |
I-PAK |
Package / Case |
TO-251-3 Short Leads, IPak, TO-251AA |
Moisture Sensitivity Level (MSL) |
Vendor Undefined |
REACH Status |
REACH Affected |
Other Names |
2156D60N745U1-1G-488 |
Standard Package |
1 |
N-Channel 600 V 6.6A (Tc) 84W (Tc) Through Hole I-PAK