onsemi NTHL022N120M3S

SILICON CARBIDE (SIC) MOSFET ELI

Manufacturer: onsemi
Manufacturer's number: onsemi NTHL022N120M3S
Package: Tube
Datasheet: PDF
Stock: 445
SKU: NTHL022N120M3S
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Unit Price: $36.1500

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Details

Parameters
Mfr	onsemi
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	68A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	18V
Rds On (Max) @ Id, Vgs	30mOhm @ 40A, 18V
Vgs(th) (Max) @ Id	4.4V @ 20mA
Gate Charge (Qg) (Max) @ Vgs	139 nC @ 18 V
Vgs (Max)	+22V, -10V
Input Capacitance (Ciss) (Max) @ Vds	3130 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	352W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-NTHL022N120M3S
Standard Package	450

N-Channel 1200 V 68A (Tc) 352W (Tc) Through Hole TO-247-3