onsemi NTHL080N120SC1

SILICON CARBIDE MOSFET, N-CHANNE

Manufacturer: onsemi
Manufacturer's number: onsemi NTHL080N120SC1
Package: Bulk
Datasheet: PDF
Stock: 3666
SKU: NTHL080N120SC1
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Details

Parameters
Mfr	onsemi
Series	-
Package	Bulk
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	44A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	348W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Moisture Sensitivity Level (MSL)	Vendor Undefined
REACH Status	REACH Unaffected
Other Names	2156-NTHL080N120SC1-488
Standard Package	1

N-Channel 1200 V 44A (Tc) 348W (Tc) Through Hole TO-247-3