onsemi NTHL080N120SC1A

SICFET N-CH 1200V 31A TO247-3

Manufacturer: onsemi
Manufacturer's number: onsemi NTHL080N120SC1A
Package: Tube
Datasheet: PDF
Stock: 7958
SKU: NTHL080N120SC1A
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Details

Parameters
Mfr	onsemi
Series	Automotive, AEC-Q101
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	31A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	20V
Rds On (Max) @ Id, Vgs	110mOhm @ 20A, 20V
Vgs(th) (Max) @ Id	4.3V @ 5mA
Gate Charge (Qg) (Max) @ Vgs	56 nC @ 20 V
Vgs (Max)	+25V, -15V
Input Capacitance (Ciss) (Max) @ Vds	1670 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	178W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3
Base Product Number	NTHL080
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	Not Applicable
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	488-NTHL080N120SC1A
Standard Package	30

N-Channel 1200 V 31A (Tc) 178W (Tc) Through Hole TO-247-3