onsemi NTMTSC1D6N10MCTXG

MOSFET N-CH 100V 35A/267A 8TDFNW

Manufacturer: onsemi
Manufacturer's number: onsemi NTMTSC1D6N10MCTXG
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 4
SKU: NTMTSC1D6N10MCTXG
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Unit Price: $6.7800

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Details

Parameters
HTSUS	8541.29.0095
Standard Package	3,000
Mfr	onsemi
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	35A (Ta), 267A (Tc)
Rds On (Max) @ Id, Vgs	1.7mOhm @ 90A, 10V
Vgs(th) (Max) @ Id	4V @ 650µA
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	7630 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	5.1W (Ta), 291W (Tc)
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Supplier Device Package	8-TDFNW (8.3x8.4)
Package / Case	8-PowerTDFN
Base Product Number	NTMTSC1
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99

N-Channel 100 V 35A (Ta), 267A (Tc) 5.1W (Ta), 291W (Tc) Surface Mount, Wettable Flank 8-TDFNW (8.3x8.4)