Panjit International Inc. PJD9N10A_L2_00001

100V N-CHANNEL MOSFET

Manufacturer: Panjit International Inc.
Manufacturer's number: Panjit International Inc. PJD9N10A_L2_00001
Package: Tape & Reel (TR)
Datasheet: PDF
Stock: 11
SKU: PJD9N10A_L2_00001
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Details

Parameters
Mfr	Panjit International Inc.
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	2.4A (Ta), 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	152mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1021 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	2W (Ta), 31W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Base Product Number	PJD9
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	3757-PJD9N10A_L2_00001DKR
Standard Package	3,000

N-Channel 100 V 2.4A (Ta), 9A (Tc) 2W (Ta), 31W (Tc) Surface Mount TO-252