Parameters | |
---|---|
Mfr | PN Junction Semiconductor |
Series | P3M |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
Technology | SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) | 650 V |
Current - Continuous Drain (Id) @ 25°C | 68A |
Drive Voltage (Max Rds On, Min Rds On) | 15V |
Rds On (Max) @ Id, Vgs | 50mOhm @ 40A, 15V |
Vgs(th) (Max) @ Id | 2.4V @ 7.5mA (Typ) |
Vgs (Max) | +20V, -8V |
FET Feature | - |
Power Dissipation (Max) | 254W |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-247-3L |
Package / Case | TO-247-3 |
RoHS Status | ROHS3 Compliant |
REACH Status | REACH Affected |
ECCN | EAR99 |
HTSUS | 8541.29.0095 |
Other Names | 4237-P3M06040K3 |
Standard Package | 1 |