PN Junction Semiconductor P3M06300K3

SICFET N-CH 650V 9A TO-247-3

Manufacturer: PN Junction Semiconductor
Manufacturer's number: PN Junction Semiconductor P3M06300K3
Package: Tube
Datasheet: PDF
Stock: 7921
SKU: P3M06300K3
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Details

Parameters
Mfr	PN Junction Semiconductor
Series	P3M
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	9A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	500mOhm @ 4.5A, 15V
Vgs(th) (Max) @ Id	2.2V @ 5mA (Typ)
Gate Charge (Qg) (Max) @ Vgs	904 nC @ 15 V
Vgs (Max)	+20V, -8V
Input Capacitance (Ciss) (Max) @ Vds	338 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	38W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3L
Package / Case	TO-247-3
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
Other Names	4237-P3M06300K3
Standard Package	1

N-Channel 650 V 9A 38W Through Hole TO-247-3L