PN Junction Semiconductor P3M12017K4

SICFET N-CH 1200V 151A TO-247-4

Manufacturer: PN Junction Semiconductor
Manufacturer's number: PN Junction Semiconductor P3M12017K4
Package: Tube
Datasheet: PDF
Stock: 9591
SKU: P3M12017K4
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Details

Parameters
Mfr	PN Junction Semiconductor
Series	P3M
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	151A
Drive Voltage (Max Rds On, Min Rds On)	15V
Rds On (Max) @ Id, Vgs	24mOhm @ 75A, 15V
Vgs(th) (Max) @ Id	2.5V @ 75mA (Typ)
Vgs (Max)	+25V, -10V
FET Feature	-
Power Dissipation (Max)	789W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-4L
Package / Case	TO-247-4
RoHS Status	ROHS3 Compliant
REACH Status	REACH Affected
Other Names	4237-P3M12017K4
Standard Package	1

N-Channel 1200 V 151A 789W Through Hole TO-247-4L