Parameters |
Mfr |
Microchip Technology |
Series |
- |
Package |
Tube |
Product Status |
Active |
FET Type |
N-Channel |
Technology |
SiCFET (Silicon Carbide) |
Drain to Source Voltage (Vdss) |
700 V |
Current - Continuous Drain (Id) @ 25°C |
65A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
20V |
Rds On (Max) @ Id, Vgs |
44mOhm @ 30A, 20V |
Vgs(th) (Max) @ Id |
2.7V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
99 nC @ 20 V |
Vgs (Max) |
+23V, -10V |
Input Capacitance (Ciss) (Max) @ Vds |
2010 pF @ 700 V |
FET Feature |
- |
Power Dissipation (Max) |
206W (Tc) |
Operating Temperature |
-55°C ~ 175°C (TJ) |
Mounting Type |
Surface Mount |
Supplier Device Package |
D3PAK |
Package / Case |
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA |
Base Product Number |
MSC035 |
RoHS Status |
ROHS3 Compliant |
Moisture Sensitivity Level (MSL) |
1 (Unlimited) |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Standard Package |
60 |
N-Channel 700 V 65A (Tc) 206W (Tc) Surface Mount D3PAK