STMicroelectronics STP11N60DM2

STP11N60DM2

Manufacturer: STMicroelectronics
Manufacturer's number: STMicroelectronics STP11N60DM2
Package: Tube
Datasheet: PDF
Stock: 7638
SKU: STP11N60DM2
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Unit Price: $1.8000

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Details

Parameters
Mfr	STMicroelectronics
Series	MDmesh™ DM2
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	420mOhm @ 5A, 10V
Vgs(th) (Max) @ Id	5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	16.5 nC @ 10 V
Vgs (Max)	±25V
Input Capacitance (Ciss) (Max) @ Vds	614 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	110W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220
Package / Case	TO-220-3
Base Product Number	STP11
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
REACH Status	REACH Unaffected
ECCN	EAR99
HTSUS	8541.29.0095
Other Names	497-16932
Standard Package	50

N-Channel 600 V 10A (Tc) 110W (Tc) Through Hole TO-220