Parameters | |
---|---|
Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 100 V |
Current - Continuous Drain (Id) @ 25°C | 135A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Rds On (Max) @ Id, Vgs | 4.5mOhm @ 60A, 10V |
Vgs(th) (Max) @ Id | 4.5V @ 250µA |
Vgs (Max) | ±20V |
Input Capacitance (Ciss) (Max) @ Vds | 7500 pF @ 50 V |
FET Feature | - |
Power Dissipation (Max) | 220W (Tc) |
Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Through Hole |
Supplier Device Package | TO-220-3 |
Package / Case | TO-220-3 |
RoHS Status | ROHS3 Compliant |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
HTSUS | 8541.10.0080 |
Other Names | 2516-RM135N100T2 |
Standard Package | 5,000 |
Mfr | Rectron USA |
Series | - |
Package | Tube |
Product Status | Active |
FET Type | N-Channel |
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