Rectron USA RM17N800HD

MOSFET N-CH 800V 17A TO263-2

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Details

N-Channel 800 V 17A (Ta) 260W (Tc) Surface Mount TO-263-2

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	17A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	320mOhm @ 8.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2060 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	260W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-263-2
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM17N800HDTR
Standard Package	8,000