Rectron USA RM21N650T2

MOSFET N-CH 650V 21A TO220-3

Quantity:

Add to Cart

Unit Price: $1.2500

Ext Price: $1.2500

Details

N-Channel 650 V 21A (Tc) 188W (Tc) Through Hole TO-220-3

Parameters
Mfr	Rectron USA
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	180mOhm @ 10.5A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	2600 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	188W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220-3
Package / Case	TO-220-3
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM21N650T2
Standard Package	5,000