Rectron USA RM2A3P60S4

MOSFET P-CH 60V 2.3A SOT223-3

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Details

P-Channel 60 V 2.3A (Ta) 1.5W (Ta) Surface Mount SOT-223-3

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	2.3A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	180mOhm @ 2A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	600 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-223-3
Package / Case	TO-261-4, TO-261AA
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM2A3P60S4TR
Standard Package	30,000