Rectron USA RM2N650LD

MOSFET N-CHANNEL 650V 2A TO252-2

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Unit Price: $0.3000

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Details

N-Channel 650 V 2A (Tc) 23W (Tc) Surface Mount TO-252-2

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	2.5Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	190 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	23W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM2N650LDTR
Standard Package	25,000