Rectron USA RM4N700IP

MOSFET N-CHANNEL 700V 4A TO251

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Details

N-Channel 700 V 4A (Tc) 46W (Tc) Through Hole TO-251

Parameters
Mfr	Rectron USA
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	700 V
Current - Continuous Drain (Id) @ 25°C	4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.4Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	3.5V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	280 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	46W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-251
Package / Case	TO-251-3 Stub Leads, IPak
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM4N700IP
Standard Package	4,000