Rectron USA RM4P30S6

MOSFET P-CH 30V 4.2A SOT23-6

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Details

P-Channel 30 V 4.2A (Ta) 1.2W (Ta) Surface Mount SOT-23-6

Parameters
Product Status	Active
FET Type	P-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	4.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Rds On (Max) @ Id, Vgs	55mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id	1.3V @ 250µA
Vgs (Max)	±12V
Input Capacitance (Ciss) (Max) @ Vds	880 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	1.2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	SOT-23-6
Package / Case	SOT-23-6
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM4P30S6TR
Standard Package	30,000
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)