Rectron USA RM5N800TI

MOSFET N-CHANNEL 800V 5A TO220F

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Details

N-Channel 800 V 5A (Tc) 32.4W (Tc) Through Hole TO-220F

Parameters
Other Names	2516-RM5N800TI
Standard Package	5,000
Mfr	Rectron USA
Series	-
Package	Tube
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	1.2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id	4.5V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1320 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	32.4W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-220F
Package / Case	TO-220-3 Full Pack
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080