Rectron USA RM6N800LD

MOSFET N-CHANNEL 800V 6A TO252-2

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Unit Price: $0.7000

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Details

N-Channel 800 V 6A (Tc) 98W (Tc) Surface Mount TO-252-2

Parameters
Current - Continuous Drain (Id) @ 25°C	6A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id	4V @ 250µA
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	1290 pF @ 50 V
FET Feature	-
Power Dissipation (Max)	98W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	TO-252-2
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RM6N800LDTR
Standard Package	25,000
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	800 V