Rectron USA RMA7N20ED1

MOSFET N-CH 20V 700MA DFN1006-3

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Details

N-Channel 20 V 700mA (Tc) 550mW (Ta) Surface Mount DFN1006-3

Parameters
Mfr	Rectron USA
Series	-
Package	Tape & Reel (TR)
Product Status	Active
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	20 V
Current - Continuous Drain (Id) @ 25°C	700mA (Tc)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Rds On (Max) @ Id, Vgs	260mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id	1.2V @ 250µA
Vgs (Max)	±8V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
FET Feature	-
Power Dissipation (Max)	550mW (Ta)
Operating Temperature	-50°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DFN1006-3
Package / Case	SC-101, SOT-883
RoHS Status	ROHS3 Compliant
Moisture Sensitivity Level (MSL)	1 (Unlimited)
HTSUS	8541.10.0080
Other Names	2516-RMA7N20ED1TR
Standard Package	40,000