Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Active |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
160 V |
Current - Continuous Drain (Id) @ 25°C |
7A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
- |
Vgs(th) (Max) @ Id |
1.45V @ 100mA |
Vgs (Max) |
±15V |
Input Capacitance (Ciss) (Max) @ Vds |
900 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
100W (Tc) |
Operating Temperature |
150°C |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-3P |
Package / Case |
TO-3P-3, SC-65-3 |
Other Names |
2156-2SJ162-E |
Standard Package |
1 |
P-Channel 160 V 7A (Ta) 100W (Tc) Through Hole TO-3P