Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
2 A |
Voltage - Collector Emitter Breakdown (Max) |
60 V |
Resistor - Base (R1) |
2.2 kOhms |
Resistor - Emitter Base (R2) |
10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
1000 @ 1A, 5V |
Vce Saturation (Max) @ Ib, Ic |
- |
Current - Collector Cutoff (Max) |
100nA |
Power - Max |
1 W |
Mounting Type |
Through Hole |
Package / Case |
3-SSIP |
Supplier Device Package |
- |
Base Product Number |
CE2F3P |
RoHS Status |
RoHS non-compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2156-CE2F3P-T-AZ |
Standard Package |
431 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 60 V 2 A 1 W Through Hole