Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
Transistor Type |
NPN - Pre-Biased |
Current - Collector (Ic) (Max) |
100 mA |
Voltage - Collector Emitter Breakdown (Max) |
50 V |
Resistor - Base (R1) |
47 kOhms |
Resistor - Emitter Base (R2) |
22 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce |
90 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic |
200mV @ 250µA, 5mA |
Current - Collector Cutoff (Max) |
100nA |
Power - Max |
200 mW |
Mounting Type |
Surface Mount |
Package / Case |
TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package |
SC-59 |
Base Product Number |
FA4L4L |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2156-FA4L4L-T1B-A |
Standard Package |
1 |
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 200 mW Surface Mount SC-59