Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
P-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
20 V |
Current - Continuous Drain (Id) @ 25°C |
2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
2.5V, 4.5V |
Rds On (Max) @ Id, Vgs |
103mOhm @ 1A, 4.5V |
Vgs(th) (Max) @ Id |
1.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
4.5 nC @ 4.5 V |
Vgs (Max) |
±12V |
Input Capacitance (Ciss) (Max) @ Vds |
365 pF @ 10 V |
FET Feature |
- |
Power Dissipation (Max) |
850mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
6-CMFPAK |
Package / Case |
6-SMD, Flat Leads |
Other Names |
2156-HAT1089C-EL-E |
Standard Package |
1 |
P-Channel 20 V 2A (Ta) 850mW (Ta) Surface Mount 6-CMFPAK