Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
600 V |
Current - Continuous Drain (Id) @ 25°C |
200mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
16.5Ohm @ 100mA, 10V |
Vgs(th) (Max) @ Id |
5V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs |
4.8 nC @ 10 V |
Vgs (Max) |
±30V |
Input Capacitance (Ciss) (Max) @ Vds |
66 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
750mW (Ta) |
Operating Temperature |
150°C |
Mounting Type |
Through Hole |
Supplier Device Package |
TO-92 |
Package / Case |
TO-226-3, TO-92-3 (TO-226AA) |
RoHS Status |
RoHS non-compliant |
REACH Status |
Vendor Undefined |
ECCN |
EAR99 |
HTSUS |
8541.29.0095 |
Other Names |
2156-HS54095TZ-E |
Standard Package |
1 |
N-Channel 600 V 200mA (Ta) 750mW (Ta) Through Hole TO-92