Parameters |
Mfr |
Renesas |
Series |
- |
Package |
Bulk |
Product Status |
Obsolete |
FET Type |
N-Channel |
Technology |
MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) |
55 V |
Current - Continuous Drain (Id) @ 25°C |
110A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) |
10V |
Rds On (Max) @ Id, Vgs |
2.4mOhm @ 55A, 10V |
Vgs(th) (Max) @ Id |
4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs |
230 nC @ 10 V |
Vgs (Max) |
±20V |
Input Capacitance (Ciss) (Max) @ Vds |
14250 pF @ 25 V |
FET Feature |
- |
Power Dissipation (Max) |
1.8W (Ta), 288W (Tc) |
Operating Temperature |
175°C |
Mounting Type |
Surface Mount |
Supplier Device Package |
TO-263-3 |
Package / Case |
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
RoHS Status |
RoHS non-compliant |
REACH Status |
REACH Unaffected |
ECCN |
EAR99 |
HTSUS |
8541.21.0095 |
Other Names |
2156-NP110N055PUJ-E1B-AY |
Standard Package |
51 |
N-Channel 55 V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263-3